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160V 600mA NPN Bipolar Transistor Mmbt5551lt1g for Switching
China ZhejiangHangzhou Electric Driving Technology Co., Ltd.
$0.03
MOQ3000 Pieces
Product profile
- Certification
- RoHS
- Encapsulation Structure
- Plastic Sealed Transistor
- Working Frequency
- High Frequency
- Power Level
- Small Power
- Function
- Switching Triode
- Structure
- NPN
- Material
- Silicon
- Installation
- Surface Mount
- Encapsulation
- Sot-23-3
- Transistor Polarity
- NPN
- Collector Base Voltage Vcbo
- 180V
- Emitter Base Voltage Vebo
- 6V
- Collector Emitter Saturation Voltage
- 200mv
- Maximum DC Collector Current
- 600mA
- Pd Power Dissipation
- 225MW
- Operating Temperature
- -55℃~+150℃
Company profile
Hangzhou Electric Driving Technology Co., Ltd.
杭州逸驱科技有限公司China ZhejiangRoom1401, Yaqi Building, No. 3786 Jiangnan Avenue, Binjiang District, Hangzhou, Zhejiang, China- Business Type: Trading Company,Manufacturer/Factory
- Avg. Response Time: ≤ 4.37h
- System Certification: TS 16949,ISO 14001,ISO 9001,HSE
Main Products
- IC Chip
- Integrated Circuit
- Diode
- Resister
- Transformer
- Capacitor
- Stepper Motor
- GPS Module
- Transistor
Main Markets
South America,Eastern Europe,Mid East,Southeast Asia,Western Europe
